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2N7002E-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-236

Description:

Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R

Pictures:

3D Model

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Product Pictures

Documentation:

2N7002E-T1-E3 Datasheet (7 Pages)

2N7002E-T1-E3 Datasheet PDF (7 Pages)

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2N7002E-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-236

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

3 Ω

Polarity

N-Channel

Power Dissipation

350 mW

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

70.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

240 mA

Input Capacitance (Ciss)

21pF @5V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

350 mW

View Datasheet >

2N7002E-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tape & Reel (TR)

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

2N7002E-T1-E3 Environmental

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