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2N7002K-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 2Ω; ID 300mA; TO-236 (SOT-23); PD 0.35W

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Documentation:

2N7002K-T1-E3 Datasheet (2 Pages)

Part Numbering System on1 Page

2N7002K-T1-E3 Datasheet PDF (2 Pages)

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2N7002K-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

4 Ω

Power Dissipation

0.35 W

Threshold Voltage

2 V

Input Capacitance

30pF @25V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60 V

Input Capacitance (Ciss)

30pF @25V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

350mW (Ta)

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2N7002K-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

3.04 mm

Operating Temperature

-55℃ ~ 150℃

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2N7002K-T1-E3 Environmental

2N7002K-T1-E3 Export Classifications

2N7002K-T1-E3 Function Overview

2N7002K-T1-E3 Documents

2N7002K-T1-E3 Datasheet

Vishay Siliconix

2 Pages / 0.06 MByte

2N7002K-T1-E3 Other Datasheet PDF

Vishay Siliconix

9 Pages / 0.22 MByte

2N7002K-T1-E3 Other References

Vishay Siliconix

1 Pages / 0.12 MByte

2N7002KT1 Documents

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2N7002K-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 2Ω; ID 300mA; TO-236 (SOT-23); PD 0.35W

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