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2N7002LT1
$ 0.031
2N7002LT1 Datasheet PDF (4 Pages)
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2N7002LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
115 mA
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
7.50 Ω
Polarity
N-Channel
Power Dissipation
0.3 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
115 mA
Input Capacitance (Ciss)
50pF @25V(Vds)
Input Power (Max)
225 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
225mW (Ta)

2N7002LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N7002LT1 Documents

ON Semiconductor
4 Pages / 0.07 MByte
ON Semiconductor
11 Pages / 0.21 MByte

2N7002 Documents

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ST Microelectronics
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NXP
Trans MOSFET N-CH 60V 0.3A 3Pin TO-236AB
SLKOR
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NTE Electronics
Trans MOSFET N-CH 60V 0.115A 3Pin SOT-23 T/R
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Small Signal Field-Effect Transistor,
Panjit
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Infineon
OptiMOS™ Small-Signal-Transistor
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