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Part Datasheet Search > MOSFETs > ON Semiconductor > 2N7002LT1G Datasheet PDF
2N7002LT1G
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2N7002LT1G Datasheet PDF (4 Pages)
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2N7002LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
115 mA
Case/Package
SOT-23-3
Power Rating
0.225 W
Halogen Free Status
Halogen Free
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
7.5 Ω
Polarity
N-Channel
Power Dissipation
200 mW
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
115 mA
Maximum Forward Voltage (Max)
1.5 V
Input Capacitance (Ciss)
50pF @25V(Vds)
Input Power (Max)
225 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
225mW (Ta)

2N7002LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Cut Tape (CT)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N7002LT1G Documents

ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.45 MByte
ON Semiconductor
17 Pages / 2.07 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
19 Pages / 1.07 MByte
ON Semiconductor
14 Pages / 0.08 MByte
ON Semiconductor
1 Pages / 0.15 MByte

2N7002LT1 Documents

ON Semiconductor
Trans MOSFET N-CH 60V 0.115A 3Pin SOT-23 T/R
Motorola
CASE 318-08, STYLE 21 SOT-23 (TO-236AB)
Micro Commercial Components
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN
Vishay Siliconix
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
Leshan Radio
Small Signal MOSFET 115 mAmps, 60 Volts
Freescale
N-CHANNEL ENHANCEMENT TMOS FET Transistor
National Semiconductor
ON Semiconductor
SOT-23 N-CH 60V 0.115A
ON Semiconductor
SOT-23 N-CH 60V 0.115A
Leshan Radio
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN
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