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Part Datasheet Search > MOSFETs > ON Semiconductor > 2N7002WT1G Datasheet PDF
2N7002WT1G
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2N7002WT1G Datasheet PDF (5 Pages)
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2N7002WT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-70-3
Halogen Free Status
Halogen Free
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.6 Ω
Polarity
N-Channel
Power Dissipation
330 mW
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
340 mA
Rise Time
9 ns
Input Capacitance (Ciss)
24.5pF @20V(Vds)
Input Power (Max)
280 mW
Fall Time
29 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
280 mW

2N7002WT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N7002WT1G Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
28 Pages / 2.95 MByte
ON Semiconductor
17 Pages / 2.07 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
19 Pages / 1.07 MByte
ON Semiconductor
4 Pages / 0.06 MByte

2N7002WT1 Documents

ON Semiconductor
SC-70 N-CH 60V 0.31A
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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