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Part Datasheet Search > BJTs > Central Semiconductor > 2N918 Datasheet PDF
2N918
$ 3.381
2N918 Datasheet PDF (3 Pages)
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2N918 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-72-3
Power Dissipation
300 mW
Gain Bandwidth Product
600 MHz
Breakdown Voltage (Collector to Emitter)
15 V
hFE Min
20 @3mA, 1V
Input Power (Max)
200 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
200 mW

2N918 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
5.84 mm
Size-Width
5.84 mm
Size-Height
5.33 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N918 Documents

Central Semiconductor
3 Pages / 0.62 MByte
Central Semiconductor
3 Pages / 0.62 MByte
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