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2N918 Datasheet PDF - Central Semiconductor

Manufacturer:

Central Semiconductor

Category:

BJTs

Case Package:

TO-72-3

Description:

RF Small Signal Bipolar Transistor, 0.05A I(C), 1Element, Silicon, NPN, TO-72

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Documentation:

2N918 Datasheet (3 Pages)

Package Outline Dimension on2 Page 3 Page

2N918 Datasheet PDF (3 Pages)

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2N918 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-72-3

Power Dissipation

300 mW

Gain Bandwidth Product

600 MHz

Breakdown Voltage (Collector to Emitter)

15 V

hFE Min

20 @3mA, 1V

Input Power (Max)

200 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

65 ℃

Power Dissipation (Max)

200 mW

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2N918 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Size-Length

5.84 mm

Size-Width

5.84 mm

Size-Height

5.33 mm

Operating Temperature

-65℃ ~ 200℃ (TJ)

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2N918 Environmental

2N918 Documents

2N918 Datasheet

Central Semiconductor

3 Pages / 0.62 MByte

2N918 Other Datasheet PDF

Central Semiconductor

3 Pages / 0.62 MByte

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