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Part Datasheet Search > BJTs > Toshiba > 2SA1962-O(Q) Datasheet PDF
2SA1962-O(Q)
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2SA1962-O(Q) Datasheet PDF (4 Pages)
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2SA1962-O(Q) Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-230 V
Current Rating
-15.0 A
Case/Package
TO-3-3
Polarity
PNP
Power Dissipation
130 W
Breakdown Voltage (Collector to Emitter)
230 V
Continuous Collector Current
15A
hFE Min
80 @1A, 5V
hFE Max
160
Input Power (Max)
130 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
130 W

2SA1962-O(Q) Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Width
4.8 mm
Operating Temperature
150℃ (TJ)

2SA1962-O(Q) Documents

Toshiba
4 Pages / 0.12 MByte
Toshiba
5 Pages / 0.12 MByte
Toshiba
1 Pages / 0.17 MByte

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Power Amplifier Applications
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