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Part Datasheet Search > BJTs > ON Semiconductor > 2SA1962OTU Datasheet PDF
2SA1962OTU
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2SA1962OTU Datasheet PDF (6 Pages)
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2SA1962OTU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Power Dissipation
130 W
Breakdown Voltage (Collector to Emitter)
250 V
hFE Min
80 @1A, 5V
Input Power (Max)
130 W
DC Current Gain (hFE)
80
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
130000 mW

2SA1962OTU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

2SA1962OTU Documents

ON Semiconductor
6 Pages / 0.46 MByte
ON Semiconductor
13 Pages / 0.57 MByte
ON Semiconductor
4 Pages / 0.62 MByte
ON Semiconductor
13 Pages / 0.34 MByte

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Power Amplifier Applications
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