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Part Datasheet Search > BJTs > ON Semiconductor > 2SA1962OTU Datasheet PDF
2SA1962OTU
$ 2.222

2SA1962OTU Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-3-3
Description:
Trans GP BJT PNP 250V 17A 3Pin(3+Tab) TO-3P Tube
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
2SA1962OTU Datasheet (6 Pages)
Package Outline Dimension on5 Page
Part Numbering System on2 Page
2SA1962OTU Application Note (13 Pages)
2SA1962OTU Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

2SA1962OTU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Power Dissipation
130 W
Breakdown Voltage (Collector to Emitter)
250 V
hFE Min
80 @1A, 5V
Input Power (Max)
130 W
DC Current Gain (hFE)
80
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
130000 mW
View Datasheet >

2SA1962OTU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

2SA1962OTU Documents

2SA1962OTU Datasheet
ON Semiconductor
6 Pages / 0.46 MByte
2SA1962OTU Other Datasheet PDF
ON Semiconductor
13 Pages / 0.57 MByte
2SA1962OTU Drawing Diagrams
ON Semiconductor
4 Pages / 0.62 MByte
2SA1962OTU Application Note
ON Semiconductor
13 Pages / 0.34 MByte

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2SA1962OTU Datasheet PDF
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2SA1962OTU Datasheet PDF
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2SA1962RTU Datasheet PDF
ON Semiconductor
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2SA1962RTU Datasheet PDF
Fairchild
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2SA1962-O Datasheet PDF
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2SA1962-O(Q,T) Datasheet PDF
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2SA1962_07 Datasheet PDF
Toshiba
Power Amplifier Applications
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