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Part Datasheet Search > BJTs > California Eastern Laboratories > 2SC5508-A Datasheet PDF
2SC5508-A
$ 1.253
2SC5508-A Datasheet PDF (10 Pages)
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2SC5508-A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-343
Power Dissipation
115 mW
Breakdown Voltage (Collector to Emitter)
3.3 V
Gain
19 dB
hFE Min
50 @5mA, 2V
Input Power (Max)
115 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
115 mW

2SC5508-A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Material
Silicon
Operating Temperature
150℃ (TJ)

2SC5508-A Documents

California Eastern Laboratories
10 Pages / 0.64 MByte
California Eastern Laboratories
7 Pages / 0.21 MByte

2SC5508 Documents

NEC
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4Pin THIN SUPER MINI-MOLD
Renesas Electronics
Trans RF BJT NPN 3.3V 0.035A 4Pin Thin-Type Super Mini-Mold
NXP
RF Manual 16th edition
Renesas Electronics
Npn Silicon Rf Transistor
California Eastern Laboratories
Trans RF BJT NPN 3.3V 0.035A 4Pin Thin-Type Super Mini-Mold T/R
NEC
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4Pin THIN SUPER MINI-MOLD
Renesas Electronics
NPN,Vceo=3.3V,Ic=35mA
Renesas Electronics
Trans GP BJT NPN 3.3V 0.035A 4Pin Thin-Type Super Mini-Mold T/R
California Eastern Laboratories
Trans RF BJT NPN 3.3V 0.035A 115mW
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