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2SC5706-P-E Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-251-3

Description:

TP NPN 50V 5A

Pictures:

3D Model

Symbol

Footprint

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Product Pictures

Documentation:

2SC5706-P-E Datasheet (11 Pages)

Package Outline Dimension on1 Page 7 Page 9 Page

Package Footprint Pad Layout on7 Page

Part Numbering System on2 Page

2SC5706-P-E Datasheet PDF (11 Pages)

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2SC5706-P-E Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

400 MHz

Number of Pins

3 Pin

Case/Package

TO-251-3

Polarity

NPN

Power Dissipation

0.8 W

Gain Bandwidth Product

400 MHz

Breakdown Voltage (Collector to Emitter)

100 V

Continuous Collector Current

hFE Min

200 @500mA, 2V

hFE Max

560

Input Power (Max)

800 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

800 mW

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2SC5706-P-E Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Bulk

Material

Silicon

View Datasheet >

2SC5706-P-E Environmental

2SC5706-P-E Export Classifications

2SC5706-P-E Function Overview

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