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Part Datasheet Search > BJTs > ON Semiconductor > 2SC5707-E Datasheet PDF
2SC5707-E
$ 0.356
2SC5707-E Datasheet PDF (10 Pages)
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2SC5707-E Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
330 MHz
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
15 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
8A
hFE Min
200 @500mA, 2V
Input Power (Max)
1 W
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000 mW

2SC5707-E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
150℃ (TJ)

2SC5707-E Documents

ON Semiconductor
10 Pages / 0.42 MByte
ON Semiconductor
10 Pages / 0.49 MByte
ON Semiconductor
5 Pages / 0.04 MByte

2SC5707 Documents

Sanyo Semiconductor
TRANSISTOR, NPN TO-251; Transistor Type: Bipolar; Transistor Polarity: NPN; Collector-to-Emitter Breakdown Voltage: 5...
ON Semiconductor
DPAK/TP-FA IPAK/TP NPN 50V 8A
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TP-FA NPN 50V 8A
ON Semiconductor
TP NPN 50V 8A
Sanyo Semiconductor
TRANS NPN 50V 8A TP-FA
Sanyo Semiconductor
Small Signal Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
Sanyo Semiconductor
High-Current Switching Applications
ON Semiconductor
Bipolar Transistor, 50V, 8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL
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