4N22A Datasheet PDF - Micropac

●DESCRIPTION

●Gallium Aluminum Arsenide (GaAlAs) infrared LED and a highgain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23Aand 4N24Acan be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.

●Features:

●• Collector is electrically isolated from the case.

●• Overall current gain...1.5 typical (4N24A)

●• Base lead provided for conventional transistor biasing

●•Rugged package

●• High gain, high voltage transistor

●• +1kV electrical isolation

●Applications:

●• Eliminate ground loops

●•Level shifting

●•Line receiver

●• Switching power supplies

●•Motor control