4N22UTX Datasheet PDF - TT Electronics/Optek Technology

●Description:

●Each isolator in this series has a 890 nm (for the 4N2_U series) and 935nm (for the 4N4_ series) wavelength infrared emitting diode and a NPN silicon phototransistor,which are mounted in a hermetically sealed Surface Mount, 6 Pin package. Devices are designed for military and/or harsh environments. Burn-in condition is VCE= 10V, IF= 40mA, PD= 275 mW, TA= 25° C.

●The 4N22U, 4N23U and 4N24U (TX, TXV) devices are processed to MIL-PRF-19500/486. The 4N47U, 4N48U and 4N48U (TX, TXV) devices are processed to MIL-PRF-19500/548.

●Features:

●• Surface Mount (SM), Leadless Chip Carrier (LCC)

●• 1 kV electrical isolation

●• Base contact provided for conventional transistor biasing

●• TX and TXV devices processed to MIL-PRF-19500

●Applications:

●• Military equipment

●• High-Reliability environments

●• High voltage isolation between input and output

●• Electrical isolation in dirty environments

●• Industrial equipment

●• Medical equipment

●• Office equipment