●Product Details
●The ADuM3224/ADuM4224 are 4 A isolated, half-bridge gate drivers that employ the Analog Devices, Inc., _i_Coupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM3224 provides 3000 V rms isolation in the narrow-body, 16-lead SOIC package, and the ADuM4224 provides 5000 V rms isolation in the wide-body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.
●The ADuM3224/ADuM4224 isolators each provide two independent isolated channels. They operate with an input supply ranging from 3.0 V to 5.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM3224/ADuM4224 offer the benefit of true, galvanic isolation between the input and each output. Each output can be continuously operated up to 537 V peak relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side can be as high as 800 V peak.
●As a result, the ADuM3224/ADuM4224 provide reliable control over the switching characteristics of IGBT/MOSFET configurations over a wide range of positive or negative switching voltages.
●APPLICATIONS
● Switching power supplies
● Isolated IGBT/MOSFET gate drives
● Industrial inverters
●### Features and Benefits
● 4 A peak output current
● Working voltage
●High-side or low-side relative to input: 537 V peak
● High frequency operation:
●1 MHz maximum
● 3.3 V to 5 V CMOS input logic
● 4.5 V to 18 V output drive
● Secondary UVLO
●ADuM3224A/ADuM4224A UVLO at 4.1 V VDDA/VDDB
●ADuM3224B/ADuM4224B UVLO at 6.9 V VDDA/VDDB
●ADuM3224C/ADuM4224C UVLO at 10.5 V VDDA/VDDB
● Precise timing characteristics
●59 ns maximum isolator and driver propagation delay
●5 ns maximum channel-to-channel matching
● CMOS input logic levels
● High common-mode transient immunity: >25 kV/μs
● Enhanced system-level ESD performance per IEC 61000-4-x
● High junction temperature operation: 125°C
● Default low output
● See data sheet for additional features
Part 3D Model
