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AFT05MS004NT1
$ 0.721
AFT05MS004NT1 Datasheet PDF (5 Pages)
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AFT05MS004NT1 Specifications

TYPE
DESCRIPTION
Frequency
520 MHz
Number of Pins
4 Pin
Case/Package
SOT-89
Number of Positions
3 Position
Power Dissipation
28 W
Output Power
4.9 W
Gain
20.9 dB
Test Current
100 mA
Input Capacitance (Ciss)
57.6pF @7.5V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
28000 mW
Voltage Rating
30 V
Supply Voltage
7.5 V

AFT05MS004NT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 150℃

AFT05MS004NT1 Documents

NXP
5 Pages / 0.3 MByte
NXP
24 Pages / 0.96 MByte

AFT05MS004 Documents

NXP
RF Power Transistor, 0.136 to 0.941GHz, 4W, Typ.Gain in dB is 20.9 @ 520MHz, 7.5V, LDMOS, SOT-89A
Freescale
Wideband RF Power LDMOS Transistor, 136-941MHz, 4W, 7.5V
NXP
Wideband RF Power LDMOS Transistor, 136-941MHz, 4W, 7.5V
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