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Part Datasheet Search > IGBTs > Alpha & Omega Semiconductor > AOTF10B65M2 Datasheet PDF
AOTF10B65M2
$ 5.865
AOTF10B65M2 Datasheet PDF (6 Pages)
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AOTF10B65M2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
30 W
Power Dissipation
30000 mW
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
262 ns
Input Power (Max)
30 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
30000 mW

AOTF10B65M2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

AOTF10B65M2 Documents

Alpha & Omega Semiconductor
6 Pages / 0.41 MByte
Alpha & Omega Semiconductor
9 Pages / 0.52 MByte
Alpha & Omega Semiconductor
1 Pages / 0.04 MByte

AOTF10B65 Documents

Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 30000mW 3Pin(3+Tab) TO-220F Tube
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