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Part Datasheet Search > IGBTs > Microsemi > APT100GT60JR Datasheet PDF
APT100GT60JR
$ 21.803

APT100GT60JR Datasheet PDF - Microsemi

Manufacturer:
Microsemi
Category:
IGBTs
Case Package:
SOT-227
Description:
Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
APT100GT60JR Datasheet (6 Pages)
Package Outline Dimension on6 Page
APT100GT60JR User Reference Manual Guide (12 Pages)
APT100GT60JR Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

APT100GT60JR Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
148 A
Case/Package
SOT-227
Power Dissipation
500000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
5.15nF @25V
Input Power (Max)
500 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500000 mW
View Datasheet >

APT100GT60JR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

APT100GT60JR Documents

APT100GT60JR Datasheet
Microsemi
6 Pages / 0.15 MByte
APT100GT60JR User Reference Manual Guide
Microsemi
12 Pages / 1.03 MByte
APT100GT60JR Other Datasheet PDF
Microsemi
5 Pages / 0.23 MByte
APT100GT60JR Other References
Microsemi
1 Pages / 0.13 MByte

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