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APT100GT60JR Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

IGBTs

Case Package:

SOT-227

Description:

Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

APT100GT60JR Datasheet (6 Pages)

Package Outline Dimension on6 Page

APT100GT60JR User Reference Manual Guide (12 Pages)

APT100GT60JR Datasheet PDF (6 Pages)

View Datasheet

Click page to view the detail

APT100GT60JR Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

4 Pin

Voltage Rating (DC)

600 V

Current Rating

148 A

Case/Package

SOT-227

Power Dissipation

500000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Input Capacitance (Cies)

5.15nF @25V

Input Power (Max)

500 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

500000 mW

View Datasheet >

APT100GT60JR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

APT100GT60JR Environmental

APT100GT60JR Export Classifications

APT100GT60JR Function Overview

APT100GT60JR Documents

APT100GT60JR Datasheet

Microsemi

6 Pages / 0.15 MByte

APT100GT60JR User Reference Manual Guide

Microsemi

12 Pages / 1.03 MByte

APT100GT60JR Other Datasheet PDF

Microsemi

5 Pages / 0.23 MByte

APT100GT60JR Other References

Microsemi

1 Pages / 0.13 MByte

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