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APT10M07JVFR
$ 63.33
APT10M07JVFR Datasheet PDF (4 Pages)
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APT10M07JVFR Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
100 V
Current Rating
225 A
Case/Package
SOT-227
Power Dissipation
700 W
Input Capacitance
21.6 nF
Gate Charge
1.05 µC
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
225 A
Rise Time
60 ns
Input Capacitance (Ciss)
18000pF @25V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
700000 mW

APT10M07JVFR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

APT10M07JVFR Documents

Microsemi
4 Pages / 0.12 MByte
Microsemi
5 Pages / 0.23 MByte

APT10M07 Documents

Microsemi
Trans MOSFET N-CH 100V 225A 4Pin SOT-227
Microchip
MOSFET N-CH 100V 225A SOT-227
Advanced Power Technology
POWER MOS V 100V 225A 0.007Ω
Advanced Power Technology
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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