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Part Datasheet Search > IGBTs > Microsemi > APT200GN60J Datasheet PDF
APT200GN60J
$ 27.03
APT200GN60J Datasheet PDF (6 Pages)
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APT200GN60J Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
682 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
14.1nF @25V
Input Power (Max)
682 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
682000 mW

APT200GN60J Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.4 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

APT200GN60J Documents

Microsemi
6 Pages / 0.47 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.46 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
1 Pages / 0.13 MByte

APT200GN60 Documents

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Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
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IGBT 600V 283A 682W SOT227
Microsemi
IGBT 600V 283A 682W SOT227
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IGBT MOD 600V 283A 682W ISOTOP
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IGBT 600V 283A 682W TO247
Microchip
IGBT MOD 600V 283A 682W ISOTOP
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