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APT25GP120BDQ1G Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 69A 417000mW 3Pin(3+Tab) TO-247

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

APT25GP120BDQ1G Datasheet (40 Pages)

Package Outline Dimension on35 Page

Part Numbering System on16 Page

APT25GP120BDQ1G User Reference Manual Guide (12 Pages)

APT25GP120BDQ1G Datasheet PDF (40 Pages)

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APT25GP120BDQ1G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

1.20 kV

Current Rating

69.0 A

Case/Package

TO-247-3

Power Dissipation

417000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

417 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

417000 mW

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APT25GP120BDQ1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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APT25GP120BDQ1G Environmental

APT25GP120BDQ1G Export Classifications

APT25GP120BDQ1G Function Overview

APT25GP120BDQ1G Documents

APT25GP120BDQ1G Datasheet

Microsemi

40 Pages / 1.9 MByte

APT25GP120BDQ1G User Reference Manual Guide

Microsemi

12 Pages / 1.03 MByte

APT25GP120BDQ1G Other Datasheet PDF

Microsemi

40 Pages / 1.97 MByte

APT25GP120BDQ1G Product Catalog

Microsemi

40 Pages / 4.07 MByte

APT25GP120BDQ1 Documents

APT25GP120BDQ1 Datasheet PDF

Microsemi

Trans IGBT Chip N-CH 1200V 69A 417000mW 3Pin(3+Tab) TO-247

APT25GP120BDQ1G Datasheet PDF

Microsemi

Trans IGBT Chip N-CH 1200V 69A 417000mW 3Pin(3+Tab) TO-247

APT25GP120BDQ1G Datasheet PDF

Microchip

IGBT 1200V 69A 417W TO247

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