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Part Datasheet Search > IGBTs > Microsemi > APT30GT60BRG Datasheet PDF
APT30GT60BRG
$ 7.026
APT30GT60BRG Datasheet PDF (6 Pages)
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APT30GT60BRG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
64.0 A
Case/Package
TO-247-3
Power Dissipation
250000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

APT30GT60BRG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT30GT60BRG Documents

Microsemi
6 Pages / 0.11 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.2 MByte
Microsemi
40 Pages / 4.07 MByte

APT30GT60 Documents

Microsemi
Trans IGBT Chip N-CH 600V 64A 250000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 64A 250000mW 3Pin(3+Tab) TO-247
Microsemi
IGBT 600V 64A 250W TO220
APT
IGBT 600V 64A 250W TO247
Microsemi
Insulated Gate Bipolar Transistor - Resonant Mode
Microchip
IGBT 600V 64A 250W TO247
Microchip
IGBT 600V 64A 250W TO247
Microsemi
Insulated Gate Bipolar Transistor - NPT Standard Speed
Microsemi
Resonant Mode Combi Igbt
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