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APT5017BVFRG
$ 13.307
APT5017BVFRG Datasheet PDF (4 Pages)
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APT5017BVFRG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
30.0 A
Case/Package
TO-247
Power Dissipation
370 W
Input Capacitance
5.28 nF
Gate Charge
300 nC
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
14 ns
Input Capacitance (Ciss)
4400pF @25V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
370000 mW

APT5017BVFRG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

APT5017BVFRG Documents

Microsemi
4 Pages / 0.06 MByte
Microsemi
5 Pages / 0.23 MByte

APT5017 Documents

Microsemi
Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247
Microsemi
TO-247 N-CH 500V 30A
Microsemi
Trans MOSFET N-CH 500V 30A 3Pin(2+Tab) D3PAK
Microsemi
TO-247 N-CH 500V 30A
Microsemi
D3PAK N-CH 500V 30A
Microsemi
D3PAK N-CH 500V 30A
Microchip
MOSFET N-CH 500V 30A TO247
Microchip
MOSFET N-CH 500V 30A D3PAK
Advanced Power Technology
POWER MOS V 500V 30A 0.17Ω
ADPOW
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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