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Part Datasheet Search > IGBTs > Microsemi > APT50GN120L2DQ2G Datasheet PDF
APT50GN120L2DQ2G
$ 12.377
APT50GN120L2DQ2G Datasheet PDF (10 Pages)
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APT50GN120L2DQ2G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
134 A
Case/Package
TO-264-3
Power Dissipation
543 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
543 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
543000 mW

APT50GN120L2DQ2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
26.49 mm
Size-Width
20.5 mm
Size-Height
5.21 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT50GN120L2DQ2G Documents

Microsemi
10 Pages / 0.22 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
10 Pages / 0.17 MByte
Microsemi
40 Pages / 4.07 MByte

APT50GN120L2DQ2 Documents

Microsemi
Trans IGBT Chip N-CH 1200V 134A 543000mW 3Pin(3+Tab) TO-264 MAX
Microchip
IGBT 1200V 134A 543W TO264
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