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Part Datasheet Search > IGBTs > Microsemi > APT75GT120JRDQ3 Datasheet PDF
APT75GT120JRDQ3
$ 25.435
APT75GT120JRDQ3 Datasheet PDF (9 Pages)
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APT75GT120JRDQ3 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
480000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
5.1nF @25V
Input Power (Max)
480 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
480000 mW

APT75GT120JRDQ3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT75GT120JRDQ3 Documents

Microsemi
9 Pages / 0.45 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.18 MByte
Microsemi
40 Pages / 4.07 MByte

APT75GT120 Documents

Microsemi
Trans IGBT Module N-CH 1200V 97A 480000mW 4Pin SOT-227
Microsemi
Trans IGBT Module N-CH 1200V 100A 416000mW 4Pin SOT-227
Microsemi
Trans IGBT Module N-CH 1200V 100A 416000mW 4Pin SOT-227
Microchip
IGBT MOD 1200V 100A 416W SOT227
Microchip
IGBT MOD 1200V 100A 416W SOT227
Microchip
IGBT MOD 1200V 97A 480W ISOTOP
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