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APT80GA60LD40 Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

IGBTs

Case Package:

TO-264-3

Description:

Trans IGBT Chip N-CH 600V 143A 625000mW 3Pin(3+Tab) TO-264

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

APT80GA60LD40 Datasheet (9 Pages)APT80GA60LD40 User Reference Manual Guide (12 Pages)

APT80GA60LD40 Datasheet PDF (9 Pages)

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APT80GA60LD40 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-264-3

Power Dissipation

625000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

22 ns

Input Power (Max)

625 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

625000 mW

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APT80GA60LD40 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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APT80GA60LD40 Environmental

APT80GA60LD40 Export Classifications

APT80GA60LD40 Function Overview

APT80GA60LD40 Documents

APT80GA60LD40 Datasheet

Microsemi

9 Pages / 0.09 MByte

APT80GA60LD40 User Reference Manual Guide

Microsemi

12 Pages / 1.03 MByte

APT80GA60LD40 Other Datasheet PDF

Microsemi

9 Pages / 0.24 MByte

APT80GA60 Documents

APT80GA60LD40 Datasheet PDF

Microsemi

Trans IGBT Chip N-CH 600V 143A 625000mW 3Pin(3+Tab) TO-264

APT80GA60B Datasheet PDF

Microsemi

Trans IGBT Chip N-CH 600V 143A 625000mW 3Pin(3+Tab) TO-247

APT80GA60LD40 Datasheet PDF

Microchip

IGBT 600V 143A 625W TO264

APT80GA60B Datasheet PDF

Microchip

IGBT 600V 143A 625W TO247

APT80GA60S Datasheet PDF

Microsemi

Insulated Gate Bipolar Transistor - Power MOS 8

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