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Part Datasheet Search > IGBTs > Microsemi > APTGF50H60T3G Datasheet PDF
APTGF50H60T3G
$ 43.127
APTGF50H60T3G Datasheet PDF (1 Pages)
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APTGF50H60T3G Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
32 Pin
Case/Package
SP-3
Power Dissipation
250000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
2.2nF @25V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
250000 mW

APTGF50H60T3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

APTGF50H60T3G Documents

Microsemi
1 Pages / 0.3 MByte
Microsemi
7 Pages / 0.51 MByte
Microsemi
40 Pages / 4.07 MByte

APTGF50H60T3 Documents

Microsemi
Trans IGBT Module N-CH 600V 65A 250000mW 32Pin Case SP-3
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