$ 169.872

APTGT600U170D4G Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

IGBTs

Case Package:

D-4

Description:

Trans IGBT Module N-CH 1700V 1.1kA 2900000mW 4Pin Case D-4

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Documentation:

APTGT600U170D4G Datasheet (1 Pages)

APTGT600U170D4G Datasheet PDF (1 Pages)

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APTGT600U170D4G Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

D-4

Power Dissipation

2.9 kW

Breakdown Voltage (Collector to Emitter)

1700 V

Input Capacitance (Cies)

51nF @25V

Input Power (Max)

2900 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

2900000 mW

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APTGT600U170D4G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Box

Operating Temperature

-40℃ ~ 150℃ (TJ)

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APTGT600U170D4G Environmental

APTGT600U170D4G Documents

APTGT600U170D4G Datasheet

Microsemi

1 Pages / 0.25 MByte

APTGT600U170D4G Other Datasheet PDF

Microsemi

6 Pages / 0.58 MByte

APTGT600U170D4G Product Catalog

Microsemi

40 Pages / 4.07 MByte

APTGT600U170D4 Documents

APTGT600U170D4G Datasheet PDF

Microsemi

Trans IGBT Module N-CH 1700V 1.1kA 2900000mW 4Pin Case D-4

APTGT600U170D4G Datasheet PDF

Microchip

IGBT MODULE 1700V 1100A 2900W D4

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