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Part Datasheet Search > BJTs > AVAGO Technologies > AT-41511-TR1 Datasheet PDF
AT-41511-TR1
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AT-41511-TR1 Datasheet PDF (11 Pages)
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AT-41511-TR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
1.50 V
Current Rating
50.0 mA
Case/Package
TO-253-4
Breakdown Voltage (Collector to Emitter)
12 V
Gain
11dB ~ 15.5dB
hFE Min
30 @5mA, 5V
Input Power (Max)
225 mW

AT-41511-TR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)

AT-41511-TR1 Documents

AVAGO Technologies
11 Pages / 0.1 MByte

AT41511 Documents

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General Purpose/ Low Noise NPN Silicon Bipolar Transistor
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General Purpose, Low Noise NPN Silicon Bipolar Transistor
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General Purpose, Low Noise NPN Silicon Bipolar Transistor
AVAGO Technologies
AVAGO Technologies
Trans RF BJT NPN 12V 0.05A 4Pin(3+Tab) SOT-143 T/R
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Trans RF BJT NPN 12V 0.05A 4Pin(3+Tab) SOT-143 Bulk
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Trans RF BJT NPN 12V 0.05A 4Pin(3+Tab) SOT-143 Bulk
Broadcom
Trans RF BJT NPN 12V 0.05A 4Pin(3+Tab) SOT-143 T/R
AVAGO Technologies
TRANSISTOR,BJT,NPN,12V V(BR)CEO,50mA I(C),SOT-143
Broadcom
Trans RF BJT NPN 12V 0.05A 4Pin(3+Tab) SOT-143 T/R
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