AUIRF1324S-7P Datasheet PDF - Infineon

●The AUIRF1324S-7P is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.

● Advanced process technology

● Repetitive avalanche allowed up to Tjmax