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Part Datasheet Search > Transistors > Infineon > AUIRF7341QTR Datasheet PDF
AUIRF7341QTR
Part 3D Model
$ 1.134
AUIRF7341QTR Datasheet PDF (10 Pages)
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AUIRF7341QTR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.4 W
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.043 Ω
Polarity
Dual N-Channel
Power Dissipation
2.4 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
5.1A
Rise Time
7.7 ns
Input Capacitance (Ciss)
780pF @25V(Vds)
Input Power (Max)
2.4 W
Fall Time
12.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2400 mW

AUIRF7341QTR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Width
4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

AUIRF7341QTR Documents

Infineon
10 Pages / 0.41 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
25 Pages / 0.26 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
Infineon
5 Pages / 0.32 MByte

AUIRF7341 Documents

Infineon
SOIC N-CH 55V 5.1A
Infineon
SOIC N-CH 55V 5.1A
International Rectifier
Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
International Rectifier
Trans MOSFET N-CH 55V 5.1A Automotive 8Pin SOIC T/R
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