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Part Datasheet Search > MOSFETs > Infineon > AUIRF7769L2TR Datasheet PDF
AUIRF7769L2TR
$ 6.805
AUIRF7769L2TR Datasheet PDF (11 Pages)
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AUIRF7769L2TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
DirectFET-L8
Number of Channels
1 Channel
Number of Positions
15 Position
Drain to Source Resistance (on) (Rds)
0.0028 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
20A
Rise Time
32 ns
Input Capacitance (Ciss)
11560pF @25V(Vds)
Fall Time
41 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)

AUIRF7769L2TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.74 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

AUIRF7769L2TR Documents

Infineon
11 Pages / 0.43 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte

AUIRF7769L2 Documents

Infineon
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance
Infineon
N-CH 100V 20A
International Rectifier
Trans MOSFET N-CH Si 100V 20A Automotive T/R
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