AUIRFB8409 Datasheet PDF - Infineon

●The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.

● Advanced process technology

● New ultra low on-resistance

● Repetitive avalanche allowed up to Tjmax

● Automotive qualified

● 175°C Operating temperature

●ESD sensitive device, take proper precaution while handling the device.