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AUIRGS30B60K
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AUIRGS30B60K Datasheet PDF (15 Pages)
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AUIRGS30B60K Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
370 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
370 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
370 W

AUIRGS30B60K Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

AUIRGS30B60K Documents

Infineon
15 Pages / 0.29 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
16 Pages / 0.29 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.19 MByte

AUIRGS30B60 Documents

Infineon
INFINEON AUIRGS30B60K IGBT Single Transistor, 78A, 600V, 370W, 600V, TO-262, 3Pins
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Trans IGBT Chip N-CH 600V 78A 370000mW Automotive 3Pin(2+Tab) D2PAK T/R
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