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BAS40LT1G
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BAS40LT1G Datasheet PDF (3 Pages)
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BAS40LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Current Rating
5.00 A
Capacitance
5.00 pF
Case/Package
SOT-23-3
Halogen Free Status
Halogen Free
Output Current
≤120 mA
Load Current
0.12 A
Number of Positions
3 Position
Forward Voltage
1 V
Polarity
Standard
Power Dissipation
225 mW
Thermal Resistance
508℃/W (RθJA)
Forward Current
120 mA
Max Forward Surge Current (Ifsm)
200 mA
Maximum Forward Voltage (Max)
1 V
Forward Current (Max)
120 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
225 mW

BAS40LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.3 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃

BAS40LT1G Documents

ON Semiconductor
3 Pages / 0.08 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
4 Pages / 0.07 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.14 MByte

BAS40LT1 Documents

ON Semiconductor
Diode Schottky 40V 0.12A 3Pin SOT-23 T/R
Leshan Radio
Schottky Barrier Diode
Motorola
CASE 318-08, STYLE 8 SOT-23 TO-236AB
ON Semiconductor
ON SEMICONDUCTOR BAS40LT1G Small Signal Schottky Diode, Single, 40V, 120mA, 1V, 200mA, 150℃
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon,
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