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Part Datasheet Search > Diode Arrays > ON Semiconductor > BAV70M3T5G Datasheet PDF
BAV70M3T5G
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BAV70M3T5G Datasheet PDF (4 Pages)
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BAV70M3T5G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-723-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Forward Voltage
1.25 V
Power Dissipation
640 mW
Reverse recovery time
6 ns
Max Repetitive Reverse Voltage (Vrrm)
100V
Forward Current
200 mA
Max Forward Surge Current (Ifsm)
500 mA
Max Reverse Leakage Current (Ir)
2.5uA
Maximum Forward Voltage (Max)
1.25V @150mA
Forward Current (Max)
0.2 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
640 mW

BAV70M3T5G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.25 mm
Size-Width
0.85 mm
Size-Height
0.55 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
8000

BAV70M3T5G Documents

ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
4 Pages / 0.09 MByte

BAV70M3T5 Documents

ON Semiconductor
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Leshan Radio
Rectifier Diode, 0.2A, 70V V(RRM),
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