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BC109C
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BC109C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-18
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
600 mW
DC Current Gain (hFE)
800
Operating Temperature (Max)
200 ℃

BC109C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

BC109C Documents

Multicomp
4 Pages / 0.14 MByte
Multicomp
4 Pages / 0.13 MByte

BC109 Documents

Multicomp
Bipolar (BJT) Single Transistor, General Purpose Amplifiers/Switches, NPN, 25V, 150MHz, 600mW
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NPN SILICON PLANAR EPITAXIAL TRANSISTORo
ETC
Low Level and General Purpose Amplifiers
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Bipolar (BJT) Single Transistor, Low Noise, NPN, 25V, 150MHz, 600mW, 200mA, 800 hFE
Multicomp
MULTICOMP BC109B Bipolar (BJT) Single Transistor, Low Noise, NPN, 25V, 150MHz, 600mW, 200mA, 450 hFE
Central Semiconductor
BC109C Series 25V 200mA 600W NPN Through Hole Silicon Transistor - TO-18
CDIL
Transistor: NPN; bipolar; 25V; 200mA; 0.2/0.75W; TO18; 4dB
CDIL
Transistor: NPN; bipolar; 25V; 200mA; 0.2/0.75W; TO18; 4dB
WERA
Bits Assortment, Stainless Steel, 10pc
Multicomp
TRANSISTOR, NPN TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transistor Case Style: TO-1...
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