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Part Datasheet Search > BJTs > ON Semiconductor > BC547B Datasheet PDF
BC547B
$ 0.067
BC547B Datasheet PDF (6 Pages)
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BC547B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
45.0 V
Current Rating
100 mA
Case/Package
TO-92-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
625 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
200 @2mA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
110
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
500 mW

BC547B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC547B Documents

ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
31 Pages / 0.08 MByte
ON Semiconductor
4 Pages / 0.48 MByte
ON Semiconductor
1 Pages / 0.15 MByte

BC547 Documents

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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
UTC
TO-92 NPN 45V 0.1A
Continental Device
0.5W(1/2W) General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.1A Ic, 110 - 800 hFE
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Trans GP BJT NPN 50V 0.1A 3Pin TO-92-18R
Secos
NPN General Purpose Transistors
Philips
Trans GP BJT NPN 45V 0.1A 3Pin SPT
Motorola
NPN silicon amplifier transistor
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