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Part Datasheet Search > BJTs > ON Semiconductor > BC639G Datasheet PDF
BC639G
$ 0.04

BC639G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
TO-92 NPN 80V 1A
Pictures:
3D Model
Symbol
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Product Pictures
Documentation:
BC639G Datasheet (4 Pages)
Package Outline Dimension on4 Page
Part Numbering System on1 Page2 Page4 Page
BC639G Datasheet PDF (4 Pages)
View Datasheet
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BC639G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
200 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
1.00 A
Case/Package
TO-226-3
Power Rating
800 mW
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
800 mW
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
1A
hFE Min
40 @150mA, 2V
Input Power (Max)
625 mW
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW
View Datasheet >

BC639G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

BC639G Documents

BC639G Datasheet
ON Semiconductor
4 Pages / 0.09 MByte
BC639G Other Datasheet PDF
ON Semiconductor
9 Pages / 0.19 MByte
BC639G Notice File
ON Semiconductor
1 Pages / 0.07 MByte
BC639G Product Catalog
ON Semiconductor
4 Pages / 0.11 MByte

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