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BC807-40LT1
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BC807-40LT1 Datasheet PDF (4 Pages)
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BC807-40LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-45.0 V
Current Rating
-500 mA
Case/Package
SOT-23-3
Polarity
PNP
Power Dissipation
225 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.5A
hFE Min
250 @100mA, 1V
Input Power (Max)
225 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
300 mW

BC807-40LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

BC807-40LT1 Documents

ON Semiconductor
4 Pages / 0.05 MByte
ON Semiconductor
11 Pages / 0.14 MByte

BC80740 Documents

CJ
PNP 트랜지스터, Ic = -500mA, Vceo = -45V, hfe = 250-600 , 패키지 SOT-23
Diotec Semiconductor
Trans GP BJT PNP 45V 0.8A Automotive 3Pin SOT-23 T/R
ST Microelectronics
SMALL SIGNAL PNP TRANSISTORS
NXP
Trans GP BJT PNP 45V 0.5A 3Pin SOT-23 Trans GP BJT PNP 45V 0.5A 3Pin SOT-23
Infineon
General Purpose Transistors \\- SOT23 package
Diodes
General Purpose Applications, 50V, 500mA, 0.25W(1/4W), 80MHz, B=250~600
先科ST
BC807-40
Multicomp
Bipolar (BJT) Single Transistor, PNP, -45V, 200MHz, 300mW, -500mA, 250
ON Semiconductor
PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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