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Part Datasheet Search > BJTs > ON Semiconductor > BC817-40LT1 Datasheet PDF
BC817-40LT1
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BC817-40LT1 Datasheet PDF (8 Pages)
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BC817-40LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
250 @100mA, 1V
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

BC817-40LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC817-40LT1 Documents

ON Semiconductor
8 Pages / 0.06 MByte
ON Semiconductor
11 Pages / 0.18 MByte
ON Semiconductor
4 Pages / 0.05 MByte

BC81740 Documents

NXP
Trans GP BJT NPN 45V 0.5A 3Pin TO-236AB T/R
CJ
NPN 트랜지스터, Ic = 500mA, Vceo = 45V, hfe = 250-600 , 패키지 SOT-23
ST Microelectronics
Trans GP BJT NPN 45V 0.5A 3Pin SOT-23
Diotec Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
Infineon
NPN Silicon AF Transistors
Multicomp
MULTICOMP BC817-40 Bipolar (BJT) Single Transistor, NPN, 45V, 170MHz, 300mW, 500mA, 250 hFE
先科ST
BC817-40
Diodes
Transistor: NPN; bipolar; 45V; 500mA; 310mW; SOT23
Siemens Semiconductor
Bipolar Transistors - BJT Transistor 300mW
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