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Part Datasheet Search > BJTs > Nexperia > BC817-40W,115 Datasheet PDF
BC817-40W,115
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BC817-40W,115 Datasheet PDF (20 Pages)
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BC817-40W,115 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Case/Package
SOT-323-3
Number of Positions
3 Position
Power Dissipation
0.29 W
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
250 @100mA, 1V
Input Power (Max)
200 mW
DC Current Gain (hFE)
250
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200 mW

BC817-40W,115 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
1 mm
Operating Temperature
150℃ (TJ)

BC817-40W,115 Documents

Nexperia
20 Pages / 0.34 MByte
Nexperia
206 Pages / 0.21 MByte
Nexperia
15 Pages / 0.23 MByte

BC81740 Documents

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Trans GP BJT NPN 45V 0.5A 3Pin TO-236AB T/R
CJ
NPN 트랜지스터, Ic = 500mA, Vceo = 45V, hfe = 250-600 , 패키지 SOT-23
ST Microelectronics
Trans GP BJT NPN 45V 0.5A 3Pin SOT-23
Diotec Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
Infineon
NPN Silicon AF Transistors
Multicomp
MULTICOMP BC817-40 Bipolar (BJT) Single Transistor, NPN, 45V, 170MHz, 300mW, 500mA, 250 hFE
先科ST
BC817-40
Diodes
Transistor: NPN; bipolar; 45V; 500mA; 310mW; SOT23
Siemens Semiconductor
Bipolar Transistors - BJT Transistor 300mW
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