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Part Datasheet Search > BJTs > ON Semiconductor > BC817-40WT1G Datasheet PDF
BC817-40WT1G
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BC817-40WT1G Datasheet PDF (5 Pages)
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BC817-40WT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Case/Package
SC-70-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
460 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.5A
hFE Min
250 @100mA, 1V
Input Power (Max)
460 mW
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
460 mW

BC817-40WT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC817-40WT1G Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
6 Pages / 0.12 MByte

BC81740WT1 Documents

ON Semiconductor
SC-70 NPN 45V 0.5A
Leshan Radio
Small Signal Bipolar Transistor, 0.5A I(C), NPN,
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