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Part Datasheet Search > BJTs > ON Semiconductor > BC846BLT1 Datasheet PDF
BC846BLT1
$ 0.013
BC846BLT1 Datasheet PDF (6 Pages)
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BC846BLT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
65.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Polarity
N-Channel
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
200 @2mA, 5V
Input Power (Max)
300 mW

BC846BLT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC846BLT1 Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
14 Pages / 0.05 MByte

BC846 Documents

CJ
SOT-23 NPN 65V 100mA
NXP
Trans GP BJT NPN 65V 0.1A Automotive 3Pin TO-236AB
Multicomp
Bipolar (BJT) Single Transistor, NPN, 65V, 100MHz, 0.25W(1/4W), 100mA, 110
Infineon
NPN Silicon AF Transistors
UTC
SWITCHING AND AMPLIFIER APPLICATIONS
Philips
Trans GP BJT NPN 65V 0.1A Automotive 3Pin TO-236AB
Nexperia
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
AUK Semiconductor
Trans GP BJT NPN 55V 0.1A 3Pin SOT-23
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
Vishay Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
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