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Part Datasheet Search > BJTs > ON Semiconductor > BC846BWT1G Datasheet PDF
BC846BWT1G
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BC846BWT1G Datasheet PDF (13 Pages)
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BC846BWT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
65.0 V
Current Rating
100 mA
Case/Package
SC-70-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
150 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
200 @2mA, 5V
Input Power (Max)
150 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

BC846BWT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.24 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC846BWT1G Documents

ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.11 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BC846BWT1 Documents

ON Semiconductor
SC-70 NPN 65V 0.1A
ON Semiconductor
SC-70 NPN 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SC-70, 3 PIN
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