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Part Datasheet Search > BJTs > ON Semiconductor > BC847BDW1T1G Datasheet PDF
BC847BDW1T1G
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BC847BDW1T1G Datasheet PDF (11 Pages)
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BC847BDW1T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
6 Pin
Voltage Rating (DC)
45.0 V
Current Rating
100 mA
Case/Package
SC-70-6
Halogen Free Status
Halogen Free
Number of Positions
6 Position
Polarity
NPN
Power Dissipation
380 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
200 @2mA, 5V
Input Power (Max)
380 mW
DC Current Gain (hFE)
450
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
380 mW

BC847BDW1T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC847BDW1T1G Documents

ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BC847BDW1T1 Documents

ON Semiconductor
Trans GP BJT NPN 45V 0.1A 6Pin SC-88 T/R
Leshan Radio
Trans GP BJT NPN 45V 0.1A 6Pin SOT-363 T/R
E-Tech
NPN Duals Dual General Purpose Transistors
ON Semiconductor
SC-88 NPN 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), NPN,
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