BC847BPDW1T3G Datasheet PDF - ON Semiconductor

●Design various electronic circuits with this versatile npn and PNP BC847BPDW1T3G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.