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Part Datasheet Search > BJTs > ON Semiconductor > BC848CWT1G Datasheet PDF
BC848CWT1G
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BC848CWT1G Datasheet PDF (13 Pages)
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BC848CWT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
100 mA
Case/Package
SC-70-3
Power Rating
150 mW
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
200 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
270
Input Power (Max)
150 mW
DC Current Gain (hFE)
420
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
150 mW

BC848CWT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC848CWT1G Documents

ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
14 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.05 MByte

BC848CWT1 Documents

ON Semiconductor
SC-70 NPN 30V 0.1A
ON Semiconductor
SC-70 NPN 30V 0.1A
Leshan Radio
Transistor,
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