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Part Datasheet Search > BJTs > ON Semiconductor > BC856BDW1T3G Datasheet PDF
BC856BDW1T3G
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BC856BDW1T3G Datasheet PDF (7 Pages)
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BC856BDW1T3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
6 Pin
Voltage Rating (DC)
-65.0 V
Current Rating
-100 mA
Case/Package
SC-70-6
Polarity
PNP
Power Dissipation
380 mW
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
hFE Max
475
Input Power (Max)
380 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
380 mW

BC856BDW1T3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.08 mm
Size-Width
1.25 mm
Size-Height
0.95 mm
Operating Temperature
-55℃ ~ 150℃

BC856BDW1T3G Documents

ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
7 Pages / 0.18 MByte

BC856BDW1T3 Documents

ON Semiconductor
SC-88 PNP 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), PNP,
ON Semiconductor
SC-88 PNP 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), PNP,
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