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BC856S
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BC856S Datasheet PDF (10 Pages)
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BC856S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SOT-363
Number of Positions
6 Position
Polarity
PNP
Power Dissipation
220 mW
hFE Min
110
DC Current Gain (hFE)
110
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
250 mW

BC856S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
1.1 mm
Operating Temperature
-65℃ ~ 150℃

BC856S Documents

NXP
10 Pages / 0.82 MByte
NXP
12 Pages / 0.08 MByte
NXP
8 Pages / 0.05 MByte

BC856 Documents

Multicomp
Bipolar (BJT) Single Transistor, PNP, -65V, 100MHz, 0.25W(1/4W), -100mA, 125
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NXP
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PNP Epitaxial Silicon Transistor
Vishay Semiconductor
Small Signal Transistors (PNP)
Continental Device
0.25W(1/4W) General Purpose PNP SMD Transistor. 65V Vceo, 0.1A Ic, 125 - 475 hFE. Complementary BC846
Nexperia
Small Signal Bipolar Transistor
ON Semiconductor
General Purpose Transistor PNP
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