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BC857BWT1G
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BC857BWT1G Datasheet PDF (6 Pages)
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BC857BWT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
SC-70-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
150 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
Input Power (Max)
150 mW
DC Current Gain (hFE)
150
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

BC857BWT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC857BWT1G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
6 Pages / 0.05 MByte

BC857BWT1 Documents

ON Semiconductor
SC-70 PNP 45V 0.1A
Motorola
CASE 419-02, STYLE 3 SOT-323/SC-70
Leshan Radio
General Purpose Transistors(PNP Silicon)
ON Semiconductor
SC-70 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-70, 3 PIN
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